? auirfn7107 base part number package type standard pack complete part number form quantity auirfn7107 pqfn 5mm x 6mm tape and reel 4000 AUIRFN7107TR v dss 75v r ds(on) max (@v gs = 10v) 8.5m ? q g (typical) 51nc i d (@t c (bottom) = 25c) 75a hexfet? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ absolute maximum ratings stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress rati ngs only; and functional operation of the device at these or any other condition beyond those indicat ed in the specifications is not implied. exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratin gs are measured under board mounted and still air conditions. ambient temper ature (ta) is 25c, unless otherwise specified. automotive grade ? pqfn 5x6 mm g d s gate drain source applications ? injection ? heavy loads ? dc-dc converter parameter max. units v ds drain-to-source voltage 75 v i d @ t a = 25c continuous drain current, v gs @ 10v 14 a i d @ t a = 70c continuous drain current, v gs @ 10v 12 i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v 75 ? i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v 53 ? i dm pulsed drain current ? 300 p d @t a = 25c power dissipation 4.4 w p d @t c(bottom) = 25c power dissipation 125 linear derating factor 0.029 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 123 mj i ar avalanche current ? 45 a t j operating junction and -55 to + 175 c ? t stg storage temperature range 1 www.irf.com ? 2014 international rectifier submit datasheet feedback april 14, 2014 hexfet ? power mosfet features ?? advanced process technology ?? ultra low on-resistance ?? 175c operating temperature ?? fast switching ?? repetitive avalanche allowed up to tjmax ?? lead-free, rohs compliant ?? automotive qualified * description specifically designed for automotive applications, this hexfet ? power mosfet utilizes the latest processing techniques to achieve extremely low on-resistance per silicon are. additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetitive avalanc he rating. these features combine to make this product an extremely efficient and reliable device for use in automotive and wide variety of other applications. downloaded from: http:///
? auirfn7107 2 www.irf.com ? 2014 international rectifier submit datasheet feedback april 14, 2014 static electrical characteristics @ t j = 25c (unless otherwise specified) ? symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 75 CCC CCC v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 0.074 CCC v/c reference to 25c, i d = 1.0ma r ds(on) static drain-to-source on-resistance CCC 6.9 8.5 m ?? v gs = 10v, i d = 45a ? v gs(th) gate threshold voltage 2.0 CCC 4.0 v v ds = v gs , i d = 100a r g internal gate resistance CCC 0.82 CCC ?? gfs forward transconductance 73 CCC CCC s v ds = 25v, i d = 45a i dss drain-to-source leakage current CCC CCC 20 a v ds = 75v, v gs = 0v CCC CCC 250 v ds = 75v, v gs = 0v, t j = 125c i gss gate-to-source forward leakage CCC CCC 100 na v gs = 20v gate-to-source reverse leakage CCC CCC -100 v gs = -20v dynamic electrical characteristics @ t j = 25c (unless otherwise specified) ? symbol parameter min. typ. max. units conditions q g total gate charge CCC 51 77 nc i d = 45a q gs gate-to-source charge CCC 15 CCC v ds = 38v q gd gate-to-drain ("miller" ) charge CCC 14 CCC v gs = 10v q sync total gate charge sync. (q g - q gd ) CCC 37 CCC i d = 45a, v ds =0v, v gs = 10v t d(on) turn-on delay time CCC 8.0 CCC ns v dd = 75v t r rise time CCC 12 CCC i d = 45a t d(off) turn-off delay time CCC 19 CCC r g = 1.8 ? t f fall time CCC 7.0 CCC v gs = 10v ? c iss input capacitance CCC 3001 CCC pf v gs = 0v c oss output capacitance CCC 371 CCC v ds = 25v c rss reverse transfer capacitance CCC 151 CCC ? = 1.0 mhz symbol parameter typ. max. units r ? jc (bottom) junction-to-case ? CCC 1.2 c/w r ? jc (top) junction-to-case ? CCC 27 r ? ja junction-to-ambient ? CCC 34 r ? ja (<10s) junction-to-ambient ? CCC 22 thermal resistance diode characteristics ??? ? symbol parameter min. typ. max. units conditions i s continuous source current CCC CCC 75 a mosfet symbol (body diode) showing the i sm pulsed source current CCC CCC 300 a integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage CCC 0.85 1.3 v t j = 25c, i s = 45a, v gs = 0v ? t rr ? reverse recovery time CCC 28 CCC ns t j = 25c, i f = 45a, v dd = 38v q rr reverse recovery charge CCC 145 CCC nc di/dt = 500a/s ? downloaded from: http:///
? auirfn7107 3 www.irf.com ? 2014 international rectifier submit datasheet feedback april 14, 2014 fig. 2 typical output characteristics fig. 3 typical transfer characteristics fig. 1 typical output characteristics fig 5. typical capacitance vs. drain-to-source voltage -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 75a v gs = 10v fig. 4 normalized on-resistance vs. temperature fig 6. typical gate charge vs. gate-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 7.0v 5.5v 4.8v 4.5v 4.3v bottom 4.0v ? 60s pulse width tj = 25c 4.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.0v ? 60s pulse width tj = 175c vgs top 15v 10v 7.0v 5.5v 4.8v 4.5v 4.3v bottom 4.0v 2 3 4 5 6 7 8 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 25v ? 60s pulse width 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 10203040506070 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 60v v ds = 38v v ds = 15v i d = 45a downloaded from: http:///
? auirfn7107 4 www.irf.com ? 2014 international rectifier submit datasheet feedback april 14, 2014 fig 8. maximum safe operating area 25 50 75 100 125 150 175 t c , case temperature (c) 0 10 20 30 40 50 60 70 80 i d , d r a i n c u r r e n t ( a ) fig. 7 typical source-to-drain diode forward voltage fig 9. maximum drain current vs. case temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 100a i d = 250a i d = 1.0ma i d = 1.0a 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig 11. maximum effective transient thermal impedance, junction-to-case fig 10. threshold voltage vs. temperature 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec dc downloaded from: http:///
? auirfn7107 5 www.irf.com ? 2014 international rectifier submit datasheet feedback april 14, 2014 fig 12. typical on-resistance vs. gate voltage fig 13. maximum avalanche energy vs. drain current fig 14a. unclamped inductive test circuit fig 14b. unclamped inductive waveforms fig 15a. switching time test circuit fig 15b. switching time waveforms 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 6 8 10 12 14 16 18 20 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 45a t j = 25c t j = 125c 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 500 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 6.5a 14a bottom 45a downloaded from: http:///
? auirfn7107 6 www.irf.com ? 2014 international rectifier submit datasheet feedback april 14, 2014 ? fig 16. peak diode recovery dv/dt test circuit for n-channel hexfet? power mosfets fig 17a. gate charge test circuit fig 17b. gate charge waveform downloaded from: http:///
? auirfn7107 7 www.irf.com ? 2014 international rectifier submit datasheet feedback april 14, 2014 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ pqfn 5x6 outline "e" package details pqfn 5x6 outline "e" part marking xxxx xywwx xxxxx international rectifier logo part number (4 or 5 digits) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) for more information on board mounting, including footprint and stencil recommendation, please refer to application note an-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf for more information on package inspection techniques, please refer to application note an-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf downloaded from: http:///
? auirfn7107 8 www.irf.com ? 2014 international rectifier submit datasheet feedback april 14, 2014 pqfn 5x6 outline "e" tape and reel note: for the most current drawing please refer to ir website at http://www.irf.com/package/ note: controlling dimensions in mm std reel quantity is 4000 parts. downloaded from: http:///
? auirfn7107 9 www.irf.com ? 2014 international rectifier submit datasheet feedback april 14, 2014 ? qualification standards can be foun d at international rectifiers web site: http//www.irf.com/ ?? highest passing voltage. qualification information ? ? qualification level automotive (per aec-q101) comments: this part number(s) passed automotive qualifi- cation. irs industrial and consumer qualification level is granted by extension of the higher automotive level. moisture sensitivity level pqfn 5x6 msl1 esd human body model class h1c (+/- 2000v) ?? aec-q101-001 charged device model class c5 (+/- 2000v) ?? aec-q101-005 rohs compliant yes notes: ? repetitive rating; pulse width limited by max. junction temperature. ? starting t j = 25c, l =0.12mh, r g = 50 ? , i as = 45a. ? pulse width ? 400s; duty cycle ?? 2%. ? r ? is measured at tj of approximately 90c. ? when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994 : http://www.irf.com /technical-info/ appnotes/an-994.pdf ? calculated continuous current based on ma ximum allowable junction temperature. downloaded from: http:///
? auirfn7107 10 www.irf.com ? 2014 international rectifier submit datasheet feedback april 14, 2014 important notice unless specifically designated for the automotive market, internatio nal rectifier corporation and it s subsidiaries (ir) reserve the right to make corrections, modifi cations, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. part numbers designated with the au prefix follow automotive industry and / or customer specific requirement s with regards to product discontinuance and process change notification. all products are sold subject to irs terms and c onditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specificat ions applicable at the time of sale in accordance with irs standard warranty. testing and other qualit y control techniques are used to the extent ir deems necessary to support this warranty. except where mandated by government requirements, te sting of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using ir components. to minimize the risks with customer prod ucts and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations , and notices. reproduction of this information with altera- tions is an unfair and deceptive business practice. ir is not re sponsible or liable for such altered documentation. infor- mation of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or service voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business practice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indem nify and hold international rectifier and its officers, em- ployees, subsidiaries, affiliates, and di stributors harmless against a ll claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any clai m of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ir was neg ligent regarding the design or manufacture of the product. only products certified as military grade by the defense logistics agency (dla) of the us department of defense, are de- signed and manufactured to meet dla military specifications required by certain m ilitary, aerospace or other applications. buyers acknowledge and agree that any use of ir products not certified by dla as military-grade, in applications requiring military grade products, is solely at the bu yers own risk and that they are solely re sponsible for compliance with all legal a nd regulatory requirements in connection with such use. ir products are neither designed nor intended for use in autom otive applications or environments unless the specific ir products are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designa- tion au. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements. for technical support, please contact irs technical assistance center http://www.irf.com/technical-info/ world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 tel: (310) 252-7105 downloaded from: http:///
|
